NPN bipolar transistor (Ebers–Moll model)


A bipolar junction transistor (BJT or bipolar transistor) is a type of transistor that relies on the contact of two types of semiconductor for its operation. NPN is one of the two types of bipolar transistors, consisting of a layer of P-doped semiconductor (the “base”) between two N-doped layers. A small current entering the base is amplified to produce a large collector and emitter current. The DC emitter and collector currents in active mode are well modeled by an approximation to the Ebers–Moll model.

Related formulas


IEThe emitter current (A)
IESThe reverse saturation current of the base–emitter diode (A)
VBEThe base–emitter voltage (mV)
VTThe thermal voltage (mV)